アクセス数 : 1283 件
ダウンロード数 : 245 件
この文献の参照には次のURLをご利用ください : https://ir.lib.shimane-u.ac.jp/3665
島根大学総合理工学部紀要. シリーズA Volume 33
published_at 1999-12-24
GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み
MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
Asahina Shuichi
full_text_file
c0040033r008.pdf
( 1.74 MB )
Descriptions
We report the growth of TlGaAs on（001）GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x，Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x＝0.0016.
About This Article
Pages
Other Article