| Title Transcription | GAAS キバンジョウ ノ チョウハチョウタイ ヒカリ ツウシンヨウ レーザ ノ カイハツ ニ ムケタ GAAS キバンジョウ ノ T1GAAS ノ MBE セイチョウ ノ ココロミ
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| Title Alternative (English) | MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
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| File | |
| language |
jpn
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| Author |
Asahina, Shuichi
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| Description | We report the growth of TlGaAs on（001）GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x，Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x＝0.0016.
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| Journal Title |
島根大学総合理工学部紀要. シリーズA
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| Volume | 33
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| Start Page | 101
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| End Page | 108
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| ISSN | 13427113
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| Published Date | 1999-12-24
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| NCID | AA11157087
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| Publisher | 島根大学総合理工学部
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| Publisher Aalternative | Interdisciplinary Faculty of Science and Engineering, Shimane University
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| NII Type |
Departmental Bulletin Paper
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| Format |
PDF
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| Text Version |
出版社版
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| Gyoseki ID | e19783
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| OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
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| Remark | 30-41+ / 1997-2007
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| 他の一覧 |
