File | |
Title |
GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み
|
Title |
MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
|
Title Transcription |
GAAS キバンジョウ ノ チョウハチョウタイ ヒカリ ツウシンヨウ レーザ ノ カイハツ ニ ムケタ GAAS キバンジョウ ノ T1GAAS ノ MBE セイチョウ ノ ココロミ
|
Creator |
Asahina Shuichi
|
Source Title |
島根大学総合理工学部紀要. シリーズA
|
Volume | 33 |
Start Page | 101 |
End Page | 108 |
Journal Identifire |
ISSN 13427113
|
Descriptions |
We report the growth of TlGaAs on(001)GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x,Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x=0.0016.
|
Language |
jpn
|
Resource Type | departmental bulletin paper |
Publisher |
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
|
Date of Issued | 1999-12-24 |
Publish Type | Version of Record |
Access Rights | open access |
Relation |
[NCID] AA11157087
|
Remark | 30-41+ / 1997-2007 |