GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み

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Title
GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み
Title
MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
Title Transcription
GAAS キバンジョウ ノ チョウハチョウタイ ヒカリ ツウシンヨウ レーザ ノ カイハツ ニ ムケタ GAAS キバンジョウ ノ T1GAAS ノ MBE セイチョウ ノ ココロミ
Creator
Asahina Shuichi
Source Title
島根大学総合理工学部紀要. シリーズA
Volume 33
Start Page 101
End Page 108
Journal Identifire
ISSN 13427113
Descriptions
We report the growth of TlGaAs on(001)GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x,Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x=0.0016.
Language
jpn
Resource Type departmental bulletin paper
Publisher
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
Date of Issued 1999-12-24
Publish Type Version of Record
Access Rights open access
Relation
[NCID] AA11157087
Remark 30-41+ / 1997-2007