| File | |
| Title |
GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み
|
| Title |
MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
|
| Title Transcription |
GAAS キバンジョウ ノ チョウハチョウタイ ヒカリ ツウシンヨウ レーザ ノ カイハツ ニ ムケタ GAAS キバンジョウ ノ T1GAAS ノ MBE セイチョウ ノ ココロミ
|
| Creator |
Asahina Shuichi
|
| Source Title |
島根大学総合理工学部紀要. シリーズA
|
| Volume | 33 |
| Start Page | 101 |
| End Page | 108 |
| Journal Identifire |
ISSN 13427113
|
| Descriptions |
Abstract
We report the growth of TlGaAs on（001）GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x，Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x＝0.0016.
|
| Language |
jpn
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
|
| Date of Issued | 1999-12-24 |
| Publish Type | Version of Record |
| Access Rights | open access |
| Relation |
[NCID]
AA11157087
|
| Remark | 30-41+ / 1997-2007 |
