アクセス数 : 1061 件
ダウンロード数 : 309 件
この文献の参照には次のURLをご利用ください : https://ir.lib.shimane-u.ac.jp/3648
島根大学総合理工学部紀要. シリーズA 32 巻
1998-12-24 発行
シリコンテクノロジーの新しい可能性 : 多孔質シリコンの特性とその応用
New Prospects of the Silicon Technology : Properties of Porous Silicon and their Application to New Electron Devices
原田 曠嗣
本文ファイル
c0040032r007.pdf
( 2.53 MB )
内容記述
Porous silicon has versatile applications for electron devices,because of its properties of quantum confinement of carriers and/or the porous nature of the structure. This paper reviews the formation mechanism of porous silicon, the mechanism of photoluminescence still under debate and possible new electron devices. Illustrative devices of both the light emittmg diode and the micro field emitter which are carried out by author are also shown.
About This Article
Pages
Other Article