| Title Transcription | シリコン テクノロジー ノ アタラシイ カノウセイ タコウシツ シリコン ノ トクセイ トソノ オウヨウ
|
| Title Alternative (English) | New Prospects of the Silicon Technology : Properties of Porous Silicon and their Application to New Electron Devices
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| File | |
| language |
jpn
|
| Author |
Harada, Hiroshi
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| Description | Porous silicon has versatile applications for electron devices，because of its properties of quantum confinement of carriers and/or the porous nature of the structure. This paper reviews the formation mechanism of porous silicon, the mechanism of photoluminescence still under debate and possible new electron devices. Illustrative devices of both the light emittmg diode and the micro field emitter which are carried out by author are also shown.
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| Journal Title |
島根大学総合理工学部紀要. シリーズA
|
| Volume | 32
|
| Start Page | 97
|
| End Page | 110
|
| ISSN | 13427113
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| Published Date | 1998-12-24
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| NCID | AA11157087
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| Publisher | 島根大学総合理工学部
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| Publisher Aalternative | Interdisciplinary Faculty of Science and Engineering, Shimane University
|
| NII Type |
Departmental Bulletin Paper
|
| OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
|
| Remark | 30-41+ / 1997-2007
|
| 他の一覧 |
