| File | |
| language |
eng
|
| Author |
Taguchi, Isao
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| Description | The temperature dependence of the electrical resistivity and the Hall coefficient at 290 K for single crystals of Ti_<1-x>f_xSe_2 are presented. The resistive anomaly due to lattice instability appears in the range of 0 ≤ x ≤ 0.35 where the Hall coefficient is found to be positive. The sign of the Hall coefficient is changed to minus for x ≥ 0.4. The results show that holes as carriers play a fundamental role in the lattice instability in TiSe_2.
|
| Subject | layer compound
Hall effect
phase transition
|
| Journal Title |
Bulletin of Shimane Medical University
|
| Volume | 2
|
| Start Page | 43
|
| End Page | 50
|
| ISSN | 03879097
|
| Published Date | 1979-12-01
|
| NCID | AN00107602
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| Publisher | 島根医科大学
|
| NII Type |
Departmental Bulletin Paper
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| Format |
PDF
|
| Text Version |
出版社版
|
| OAI-PMH Set |
Faculty of Medicine
|
| 他の一覧 |
