Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs

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Use this link to cite this item : https://ir.lib.shimane-u.ac.jp/53953

language	eng
Author	Tsuchiya Toshiaki Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan Yoshida Keiichi Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan Sakuraba Masao Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan Murota Junichi Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Subject	heterointerface trap; carrier capture process; charge pumping; MOSFET
Journal Title	TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS
Volume	470
Start Page	201
End Page	+
ISSN	1013-9826
Published Date	2011
DOI	10.4028/www.scientific.net/KEM.470.201
Publisher	TRANS TECH PUBLICATIONS LTD
NII Type	Journal Article
OAI-PMH Set	Faculty of Science and Engineering