| 言語 |
英語
|
| 著者 |
Tsuchiya Toshiaki
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
Yoshida Keiichi
Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
Sakuraba Masao
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Murota Junichi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
|
| 主題 | heterointerface trap; carrier capture process; charge pumping; MOSFET
|
| 掲載誌名 |
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS
|
| 巻 | 470
|
| 開始ページ | 201
|
| 終了ページ | +
|
| ISSN | 1013-9826
|
| 発行日 | 2011
|
| DOI | |
| 出版者 | TRANS TECH PUBLICATIONS LTD
|
| 資料タイプ |
学術雑誌論文
|
| 部局 |
総合理工学部
|
