| Title Transcription | デンシセン ショウシャシタ コウ ジュンド ゲルマニウム チュウ ノ フカイ ケッカン ジュンイ
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| Title Alternative (English) | Deep Defect States in High-Purity Germanium Irradiated with Electrons
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| File | |
| language |
eng
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| Author |
Ito, Kazuyoshi
Baba, Ichiro
Ito, Takashi
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| Description | Deep defect levels produced in high-purity n-type and p-type germanium by irradiation with 1.O MeV, 1. 5 MeV and 2.0 MeV electrons were studied by DLTS technique. Two electron traps located at E_c -0.36 eV and E_c -0.41 eV found to be formed in n-type material and two hole traps at E_v +0.22 eV and E_v +0.31 eV in p-type. Introduction rates of the traps at E_c -0.41 eV and E_v +0.22 eV depended on irradiation energies of electrons. Capture cross sections of the two electron traps were estimated to be 1.8 x 10^<-11>cm_2 for the level at E_c - 0.36 eV and 8.4 x l0^<-13> cm_2 for the E_c -0.41 eV level, and those of the two hole traps were 1.8 x 10^<-13> cm_2 for the E_v+0.22 eV Ievel and 5.5 x 10^<-14> cm_2 for the E_v+0.31 eV level.
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| Journal Title |
Memoirs of the Faculty of Science, Shimane University
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| Volume | 19
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| Start Page | 83
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| End Page | 88
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| ISSN | 03879925
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| Published Date | 1985-12-25
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| NCID | AN00108106
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| Publisher | 島根大学理学部
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| Publisher Aalternative | The Faculty of Science, Shimane University
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| NII Type |
Departmental Bulletin Paper
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| OAI-PMH Set |
Faculty of Science and Engineering
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| 他の一覧 |
