電子線照射した高純度ゲルマニウム中の深い欠陥準位

その他

Deep defect levels produced in high-purity n-type and p-type germanium by irradiation with 1.O MeV, 1. 5 MeV and 2.0 MeV electrons were studied by DLTS technique. Two electron traps located at E_c -0.36 eV and E_c -0.41 eV found to be formed in n-type material and two hole traps at E_v +0.22 eV and E_v +0.31 eV in p-type. Introduction rates of the traps at E_c -0.41 eV and E_v +0.22 eV depended on irradiation energies of electrons. Capture cross sections of the two electron traps were estimated to be 1.8 x 10^<-11>cm_2 for the level at E_c - 0.36 eV and 8.4 x l0^<-13> cm_2 for the E_c -0.41 eV level, and those of the two hole traps were 1.8 x 10^<-13> cm_2 for the E_v+0.22 eV Ievel and 5.5 x 10^<-14> cm_2 for the E_v+0.31 eV level.