| File | |
| Title |
電子線照射した高純度ゲルマニウム中の深い欠陥準位
|
| Title |
Deep Defect States in High-Purity Germanium Irradiated with Electrons
|
| Title Transcription |
デンシセン ショウシャシタ コウ ジュンド ゲルマニウム チュウ ノ フカイ ケッカン ジュンイ
|
| Creator |
Ito Kazuyoshi
Baba Ichiro
Ito Takashi
|
| Source Title |
島根大学理学部紀要
Memoirs of the Faculty of Science, Shimane University
|
| Volume | 19 |
| Start Page | 83 |
| End Page | 88 |
| Journal Identifire |
ISSN 03879925
|
| Descriptions |
Abstract
Deep defect levels produced in high-purity n-type and p-type germanium by irradiation with 1.O MeV, 1. 5 MeV and 2.0 MeV electrons were studied by DLTS technique. Two electron traps located at E_c -0.36 eV and E_c -0.41 eV found to be formed in n-type material and two hole traps at E_v +0.22 eV and E_v +0.31 eV in p-type. Introduction rates of the traps at E_c -0.41 eV and E_v +0.22 eV depended on irradiation energies of electrons. Capture cross sections of the two electron traps were estimated to be 1.8 x 10^<-11>cm_2 for the level at E_c - 0.36 eV and 8.4 x l0^<-13> cm_2 for the E_c -0.41 eV level, and those of the two hole traps were 1.8 x 10^<-13> cm_2 for the E_v+0.22 eV Ievel and 5.5 x 10^<-14> cm_2 for the E_v+0.31 eV level.
|
| Language |
eng
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根大学理学部
The Faculty of Science, Shimane University
|
| Date of Issued | 1985-12-25 |
| Access Rights | open access |
| Relation |
[NCID]
AN00108106
|
