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language
eng
Author
Taguchi, Isao
Description
The temperature dependence of the electrical resistivity and the Hall coefficient at 290 K for single crystals of Ti_<1-x>f_xSe_2 are presented. The resistive anomaly due to lattice instability appears in the range of 0 ≤ x ≤ 0.35 where the Hall coefficient is found to be positive. The sign of the Hall coefficient is changed to minus for x ≥ 0.4. The results show that holes as carriers play a fundamental role in the lattice instability in TiSe_2.
Subject
layer compound
Hall effect
phase transition
Journal Title
Bulletin of Shimane Medical University
Volume
2
Start Page
43
End Page
50
ISSN
03879097
Published Date
1979-12-01
NCID
AN00107602
Publisher
島根医科大学
NII Type
Departmental Bulletin Paper
Format
PDF
Text Version
出版社版
OAI-PMH Set
Faculty of Medicine
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