液晶ディスプレイパネル用レーザ結晶化ポリシリコン薄膜の移動度に対するプラズマ水素化の効果

その他

This paper describes the behavior of H atoms in laser-crystallized poly-Si for thin-film transistors on liquid crystal display panels, where H atoms were penetrated by plasma hydrogenation in order to improve mobility. Mobility was measured by Hall effect. Si-hydrogen bonds were analyzed by Raman scattering. By short-time hydrogenation, penetrated H atoms terminate dangling bonds as the Si-H configuration largely at grain boundaries, which results in the improvement of mobility. By excessive hydrogenation, Si-H_2 bonds are generated simultaneously with degradation of mobility. Si-H_2 bonds are largely formed at ingrain defects. Hydrogenation using the hot-wire method was also made and it was shown that plasma damage does not take a part of those hydrogenation effects. Origin of correlation among Si-H_2, mobility and amount of in-grain defects was discussed based on impurity scattering and weak-bond models.