| Title Transcription | GAAS ON SI デンシ デバイス ノ ゲンジョウ ト テンボウ
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| Title Alternative (English) | The Present Status and Prospects in GaAs-on-Si Electromc Devices
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| File | |
| language |
eng
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| Author |
Moritani, Akihiro
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| Description | Power metal semiconductor field effect transistors (MESFET'S) have been fabricated to show that they have come to the stage of practical use. This paper reviews what have inhibited the practical use of GaAs-on-Si electronic devices and how they have been overcome by focusing the application of GaAs-on-Si to the power MESFET's and high electron mobility transistors (HEMT's). It is demonstrated that the practical application of the GaAs-on-Si power MESFET's to the base-station devices for mobile phones is one of the most attractive in the very near future.
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| Journal Title |
島根大学総合理工学部紀要. シリーズA
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| Volume | 31
|
| Start Page | 119
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| End Page | 137
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| ISSN | 13427113
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| Published Date | 1997-12-26
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| NCID | AA11157087
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| Publisher | 島根大学総合理工学部
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| Publisher Aalternative | Interdisciplinary Faculty of Science and Engineering, Shimane University
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| NII Type |
Departmental Bulletin Paper
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| OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
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| Remark | 30-41+ / 1997-2007
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| 他の一覧 |
