| File | |
| Title |
GaAs-on-Si電子デバイスの現状と展望
|
| Title |
The Present Status and Prospects in GaAs-on-Si Electromc Devices
|
| Title Transcription |
GAAS ON SI デンシ デバイス ノ ゲンジョウ ト テンボウ
|
| Creator | |
| Source Title |
島根大学総合理工学部紀要. シリーズA
|
| Volume | 31 |
| Start Page | 119 |
| End Page | 137 |
| Journal Identifire |
ISSN 13427113
|
| Descriptions |
Power metal semiconductor field effect transistors (MESFET'S) have been fabricated to show that they have come to the stage of practical use. This paper reviews what have inhibited the practical use of GaAs-on-Si electronic devices and how they have been overcome by focusing the application of GaAs-on-Si to the power MESFET's and high electron mobility transistors (HEMT's). It is demonstrated that the practical application of the GaAs-on-Si power MESFET's to the base-station devices for mobile phones is one of the most attractive in the very near future.
|
| Language |
eng
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
|
| Date of Issued | 1997-12-26 |
| Access Rights | open access |
| Relation |
[NCID] AA11157087
|
| Remark | 30-41+ / 1997-2007 |
