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language
eng
Author
Suzuki, Kazuya Department of Physics and Materials Science, Shimane University, Matsue 690-8504, Japan
Un-no, Hidetomo Department of Physics, Kanazawa University, Kanazawa 920-1192, Japan
Morikawa, Kimihiko Department of Physics and Materials Science, Shimane University, Matsue 690-8504, Japan
Okamoto, Hiroyuki School of Health Sciences, Kanazawa University, Kanazawa 920-0942, Japan
Description
Synthesized diamond crystals grown at high temperatures and high pressures were characterized by three-dimensional X-ray topography. The diffraction planes and wavelength of the monochromatic X-rays used were (004), {111}, and { 12,12,8} , and 0.0521 nm, respectively. Images of lattice defects in diamond crystals were reconstructed from a stack of about 300 X-ray limited projection topographs using the image processing software Image-J. The three-dimensional structures and nature of lattice defects were identified on the basis of the reconstructed topographs. The pyramidal shape of the four-part stacking fault generated from the seed crystal was identified using the dependence of visible or invisible defect images with diffraction planes. The sector boundary between the [001] and [111] growth directions was also first observed by three-dimensional topography. The image of the sector boundary did not show any dependence on diffraction planes.
Journal Title
Japanese Journal of Applied Physics
Volume
57
Issue
8
Published Date
2018-7-12
DOI
Publisher
IOP Publishing
NII Type
Journal Article
Format
PDF
Rights
Kaoru Mizuno et al 2018 Jpn. J. Appl. Phys. 57
Text Version
出版社版
OAI-PMH Set
Faculty of Science and Engineering
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