Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model

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Use this link to cite this item : https://ir.lib.shimane-u.ac.jp/54140

language	eng
Author	Kajikawa, Yasutomo
Journal Title	Materials Science and Engineering: B
Volume	263
Published Date	2020-10-01
DOI	10.1016/j.mseb.2020.114809
Publisher	Elsevier B.V.
NII Type	Journal Article
Gyoseki ID	e39069
OAI-PMH Set	Faculty of Science and Engineering