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language |
eng
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Author | |
Description | As-grown and annealed samples of InAs layers grown by MBE at 150-350℃ were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150-200 ℃ are higher by about 0.5 % than those in the layers grown at 300-350 ℃. HRXRD measurements revealed that the layers grown at 150-200 ℃ have larger lattice spacings than the InAs substrate by about 0.02 %. Hall measurements revealed that the free-electron concentration in the layer grown at 200 ℃ is as high as 1.4×10^<19> cm^<-3> while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250 ℃, both the lattice spacing and the free-electron concentration of the layer grown at 200 ℃ were observed to decrease. These phenomena can be reasonably attributed to antisite As.
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Subject | Semiconducting III-V materials
Molecular beam epitaxy
Point defects
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Journal Title |
Journal of crystal growth
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Volume | 301-302
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Start Page | 256
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End Page | 259
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ISSN | 00220248
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Published Date | 2006
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DOI | |
DOI Date | 2013-04-01
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NCID | AA00696341
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Publisher | Elsevier
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DCMI | text
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NII Type |
Journal Article
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Format |
PDF
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Rights | Copyright c 2006 Elsevier B.V. All rights reserved
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Text Version |
著者版
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Gyoseki ID | e19781
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OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
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