ファイル | |
言語 |
英語
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著者 | |
内容記述(抄録等) | As-grown and annealed samples of InAs layers grown by MBE at 150-350℃ were characterized by electron probe microanalysis (EPMA), high resolution X-ray diffraction (HRXRD), Hall measurements, and secondary ion mass spectrometry (SIMS). EPMA revealed that the As mole fractions in the layers grown at 150-200 ℃ are higher by about 0.5 % than those in the layers grown at 300-350 ℃. HRXRD measurements revealed that the layers grown at 150-200 ℃ have larger lattice spacings than the InAs substrate by about 0.02 %. Hall measurements revealed that the free-electron concentration in the layer grown at 200 ℃ is as high as 1.4×10^<19> cm^<-3> while such a high concentration of impurities cannot be detected by SIMS. Upon annealing at higher temperatures than 250 ℃, both the lattice spacing and the free-electron concentration of the layer grown at 200 ℃ were observed to decrease. These phenomena can be reasonably attributed to antisite As.
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主題 | Semiconducting III-V materials
Molecular beam epitaxy
Point defects
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掲載誌名 |
Journal of crystal growth
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巻 | 301-302
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開始ページ | 256
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終了ページ | 259
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ISSN | 00220248
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発行日 | 2006
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DOI | |
DOI公開日 | 2013-04-01
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NCID | AA00696341
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出版者 | Elsevier
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DCMI | text
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資料タイプ |
学術雑誌論文
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ファイル形式 |
PDF
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権利関係 | Copyright c 2006 Elsevier B.V. All rights reserved
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著者版/出版社版 |
著者版
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業績ID | e19781
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部局 |
(旧組織)大学院総合理工学研究科
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