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Title Transcription
Pガタ ゲルマニウム ノ ショウスウ キャリヤライフタイム ニ オヨボス γセン ショウシャ ノ エイキョウ
Title Alternative
Effects of Gamma Irradiation on Minority Carrier Lifetime in p-Type Germanium
File
language
eng
Author
Ito, Kazuyoshi
Oka, Masahiro
Saito, Haruo
Description
Mesurements of carrier lifetime from 150 to 300゜K have been made on samples of indiumand gallium-doped germanium after gamma irradiation at room temperature. In galliumdoped crystals, the formation of traps was observed only in a low resistivity material. The positions of the trapping levels were found to be O.66 eV and O.13 eV from the conduction band. It seems that the deep trap exhibits multiple trapping. The shallow trap was annealed readily at the stage around 430゜K but the deep trap was stable by annealing at this temperature. No trapping level was introduced by the irradiation into indium-doped sample.
Journal Title
Memoirs of the Faculty of Literature and Science, Shimane University. Natural sciences
Volume
5
Start Page
29
End Page
39
ISSN
03709434
Published Date
1972-03-10
NCID
AN0010806X
Publisher
島根大学文理学部
Publisher Aalternative
The Faculty of Literature and Science, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Faculty of Science and Engineering
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