| Title Transcription | Pガタ ゲルマニウム ノ ショウスウ キャリヤライフタイム ニ オヨボス γセン ショウシャ ノ エイキョウ
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| Title Alternative (English) | Effects of Gamma Irradiation on Minority Carrier Lifetime in p-Type Germanium
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| File | |
| language |
eng
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| Author |
Ito, Kazuyoshi
Oka, Masahiro
Saito, Haruo
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| Description | Mesurements of carrier lifetime from 150 to 300゜K have been made on samples of indiumand gallium-doped germanium after gamma irradiation at room temperature. In galliumdoped crystals, the formation of traps was observed only in a low resistivity material. The positions of the trapping levels were found to be O.66 eV and O.13 eV from the conduction band. It seems that the deep trap exhibits multiple trapping. The shallow trap was annealed readily at the stage around 430゜K but the deep trap was stable by annealing at this temperature. No trapping level was introduced by the irradiation into indium-doped sample.
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| Journal Title |
Memoirs of the Faculty of Literature and Science, Shimane University. Natural sciences
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| Volume | 5
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| Start Page | 29
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| End Page | 39
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| ISSN | 03709434
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| Published Date | 1972-03-10
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| NCID | AN0010806X
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| Publisher | 島根大学文理学部
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| Publisher Aalternative | The Faculty of Literature and Science, Shimane University
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| NII Type |
Departmental Bulletin Paper
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| OAI-PMH Set |
Faculty of Science and Engineering
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| 他の一覧 |
