number of downloads : ?
Title Transcription
スイソ イオン オ チュウニュウシタ ゲルマニウム ノ DLTS ソクテイ
Title Alternative
DLTS Measurements on Hydrogen Implanted Germanium
File
language
eng
Author
Ito, Kazuyoshi
Ito, Takashi
Corbett, James W.
Description
Deep levels introduced by 50 KeV hydrogen ions or 1.5 MeV electrons in undoped germanium have been studied using deep level transient spectroscopy. Five hole traps have been observed after implantation. The energy levels associated with these traps, their cross sections and their annealing behaviours have been determined. The two trap levels at E_v + 0.38 eV and at E_v +0.42 eV annealed at the same temperature, and they are attributable to the defect levels associated with divacancy-hydrogen complex.
Journal Title
Memoirs of the Faculty of Science, Shimane University
Volume
17
Start Page
23
End Page
30
ISSN
03879925
Published Date
1983-12-25
NCID
AN00108106
Publisher
島根大学理学部
Publisher Aalternative
The Faculty of Science, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Faculty of Science and Engineering
このエントリーをはてなブックマークに追加