| Title Transcription | スイソ イオン オ チュウニュウシタ ゲルマニウム ノ DLTS ソクテイ
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| Title Alternative (English) | DLTS Measurements on Hydrogen Implanted Germanium
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| File | |
| language |
eng
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| Author |
Ito, Kazuyoshi
Ito, Takashi
Corbett, James W.
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| Description | Deep levels introduced by 50 KeV hydrogen ions or 1.5 MeV electrons in undoped germanium have been studied using deep level transient spectroscopy. Five hole traps have been observed after implantation. The energy levels associated with these traps, their cross sections and their annealing behaviours have been determined. The two trap levels at E_v + 0.38 eV and at E_v +0.42 eV annealed at the same temperature, and they are attributable to the defect levels associated with divacancy-hydrogen complex.
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| Journal Title |
Memoirs of the Faculty of Science, Shimane University
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| Volume | 17
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| Start Page | 23
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| End Page | 30
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| ISSN | 03879925
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| Published Date | 1983-12-25
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| NCID | AN00108106
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| Publisher | 島根大学理学部
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| Publisher Aalternative | The Faculty of Science, Shimane University
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| NII Type |
Departmental Bulletin Paper
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| OAI-PMH Set |
Faculty of Science and Engineering
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| 他の一覧 |
