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Title Transcription
GAAS ON SI デンシ デバイス ノ ゲンジョウ ト テンボウ
Title Alternative
The Present Status and Prospects in GaAs-on-Si Electromc Devices
File
language
eng
Author
Moritani, Akihiro
Description
Power metal semiconductor field effect transistors (MESFET'S) have been fabricated to show that they have come to the stage of practical use. This paper reviews what have inhibited the practical use of GaAs-on-Si electronic devices and how they have been overcome by focusing the application of GaAs-on-Si to the power MESFET's and high electron mobility transistors (HEMT's). It is demonstrated that the practical application of the GaAs-on-Si power MESFET's to the base-station devices for mobile phones is one of the most attractive in the very near future.
Journal Title
島根大学総合理工学部紀要. シリーズA
Volume
31
Start Page
119
End Page
137
ISSN
13427113
Published Date
1997-12-26
NCID
AA11157087
Publisher
島根大学総合理工学部
Publisher Aalternative
Interdisciplinary Faculty of Science and Engineering, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
Remark
30-41+ / 1997-2007