| File | |
| Title |
シリコンテクノロジーの新しい可能性 : 多孔質シリコンの特性とその応用
|
| Title |
New Prospects of the Silicon Technology : Properties of Porous Silicon and their Application to New Electron Devices
|
| Title Transcription |
シリコン テクノロジー ノ アタラシイ カノウセイ タコウシツ シリコン ノ トクセイ トソノ オウヨウ
|
| Creator |
Harada Hiroshi
|
| Source Title |
島根大学総合理工学部紀要. シリーズA
|
| Volume | 32 |
| Start Page | 97 |
| End Page | 110 |
| Journal Identifire |
ISSN 13427113
|
| Descriptions |
Porous silicon has versatile applications for electron devices，because of its properties of quantum confinement of carriers and/or the porous nature of the structure. This paper reviews the formation mechanism of porous silicon, the mechanism of photoluminescence still under debate and possible new electron devices. Illustrative devices of both the light emittmg diode and the micro field emitter which are carried out by author are also shown.
|
| Language |
jpn
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
|
| Date of Issued | 1998-12-24 |
| Access Rights | open access |
| Relation |
[NCID] AA11157087
|
| Remark | 30-41+ / 1997-2007 |
