超局真空対応非接触容量 : 電圧法によるシリコン清浄表面と極薄絶縁膜/シリコン界面の評価

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c0040035r011.pdf 1.56 MB エンバーゴ : 2002-05-17
Title
超局真空対応非接触容量 : 電圧法によるシリコン清浄表面と極薄絶縁膜/シリコン界面の評価
Title
Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Clean and Ultrathin-Insulator-Covered Silicon Surfaces
Title Transcription
チョウキョク シンクウ タイオウ ヒセッショク ヨウリョウ デンアツホウ ニヨル シリコン セイジョウ ヒョウメン ト ゴクハク ゼツエンマク シリコン カイメン ノ ヒョウカ
Creator
Source Title
島根大学総合理工学部紀要. シリーズA
Volume 35
Start Page 121
End Page 137
Journal Identifire
ISSN 13427113
Descriptions
In the ultrahigh vacuum (UHV) contactless capacitance-voltage (C- V) technique, a narrow UHV-gap(300-400 nm) is maintained between the electrode and the sample surface by a capacitance feedback and a piezo-electric control mechanism. This thin gap acts as an additional insulator and allows standard MIS assessment even for a free and ultrathin insulator covered semiconductor surfaces. Using this technique, nearsurface macroscopic electronic properties such as the conduction type, doping density, surface/interface state density distribution and Fermi level pinning position can be determined quantitatively. Here, the electronic properties of the hydrogen-terminated silicon surfaces and ultrathin insulator covered silicon surfaces were characterized. X-ray photoelectron spectroscopy (XPS) measurements were also done. Hydrogen terminated silicon surfaces possess fast surface states and slow surface states. By the sufiiciently long NH_4F treatment followed by UHV anneal at 200℃, a UHV-compatible completely passivated surface could be obtained. The most likely origin of fast surface state is silicon-dangling bond, and that of slow surface states is excess hydrogen. On the other hand, relatively well-behaved ultrathin insulator/silicon interface was obtained after electron cyclotron resonance (ECR) N_20-plasma oxynitridation process at 400℃. Formation of a phase-separated Si_3N_4/Si0_2 structure is important to realize a well-passivated interface. The electronic and chemical properties of the interfaces showed strong correlations.
Language
jpn
Resource Type departmental bulletin paper
Publisher
島根大学総合理工学部
Interdisciplinary Faculty of Science and Engineering, Shimane University
Date of Issued 2001-12-24
Access Rights open access
Relation
[NCID] AA11157087
Remark 30-41+ / 1997-2007