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language
eng
Author
Okamoto, Hiroyuki Department of Health Sciences, Kanazawa University
Hashimoto, Eiji Hiroshima Synchrotron Radiation Center, Hiroshima University
Kino, Takao Research Institute of Advanced Technology, Hiroshima Kokusai Gakuin Univ.
Description
Large vacancy clusters in aluminum single crystals with low dislocation density, which show up as black dots in X-ray topographs, generate new dislocations and stacking faults during heat treatments. In order to obtain dislocation-free or low-dislocation-density metal single crystals, it is necessary to suppress the formation of large vacancy clusters. To this end, our starting material was either (1) ultrahigh-purity aluminum, intended to minimize the number of nucleation sites for large vacancy clusters, or (2) a dilute alloy of Zn in Al, intended to block the migration of excess vacancies by binding them with zinc atoms during slow cooling. Single crystals of the Al-Zn dilute alloy failed to improve the perfection unless a large vacancy cluster was formed. Upon cyclic annealing, however, the number density of black dots in X-ray topographs of ultrahigh-purity aluminum crystals decreased rapidly and significantly. It was thus confirmed that using a high-purity starting material was effective in suppressing the formation of large vacancy clusters.
Journal Title
Transaction of the Materials Reserch Society of Japan
Volume
41
Issue
3
Start Page
243
End Page
246
ISSN
1382-3469
ISSN(Online)
2188-1650
Published Date
2016-9-1
DOI
NII Type
Journal Article
Format
PDF
Text Version
出版社版
Gyoseki ID
e31466
OAI-PMH Set
Faculty of Science and Engineering