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language
jpn
Title Transcription
ビショウカク ニュウシャ エックス セン トポグラフィ ニヨル ハンドウタイ ハクマク ノ ケッショウ ヒョウカ
Title Alternative (English)
Characterization of Semiconductor Thin Films by Grazing Incident X-ray Topography
Author
岡本 博之
Description
X-ray topographic studies on characterization of semiconductor thin layer were reviewed. Reflection topographs of thin layer were taken by synchrotron radiation X-ray from a storage ring. In these papers, relaxation mechanisms of mismatch in lattice constant between thin layer and substrate were clarified and critical thickness for formation of misfit dislocations was determined for various hetero-epitaxial grown semiconductor thin film. Investigations using grazing incident X-ray topography on semiconductor thin film were also surveyed.
Journal Title
Nihon Kessho Gakkaishi
Volume
54
Issue
1
Start Page
24
End Page
28
ISSN
0369-4585
ISSN(Online)
1884-5576
Published Date
2012/2/29
DOI
Publisher
日本結晶学会
Publisher Transcription
ニホン ケッショウ ガッカイ
Publisher Aalternative
The Crystallographic Society of Japan
NII Type
Journal Article
Format
PDF
Text Version
出版社版
OAI-PMH Set
Faculty of Science and Engineering