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Title Transcription
テイ ショウヒデンリョク コウソク CMOS SOI デバイス ギジュツ
Title Alternative (English)
Low-Power High-Speed CMOS/SOI Device Technology
File
language
jpn
Author
Tsuchiya, Toshiaki
Description
CMOS (complementary Metal Oxide Semconductor)/SOI(sillcon on Insulator) devices are very promising for low-power and high-speed VLSI applications. Fundamental matters regarding SOI devices, such as a kind of SOI substrates, features of SOI CMOS structures, and two kinds of operation modes in SOI MOSFETs,i.e., fully-depleted and partially-depleted modes, are explamed, and the reason why CM0S/SOI is effective for low-power and high-speed LSIs is described. Floating body effects in SOI MOSFFTs and some proposed methods to prevent the effects are explained, and hot carrier reliability in ultra-thin SOI MOSFETs are also described. They are most important issue from the view point of device operation. Dynamic threshold-voltage MOSFFT, which is suitable for ultra-low voltage LSIs, is introduced . Finally,the effectiveness of SOI devices is veriied based on some expermental LSIs.
Journal Title
島根大学総合理工学部紀要. シリーズA
Volume
32
Start Page
111
End Page
129
ISSN
13427113
Published Date
1998-12-24
NCID
AA11157087
Publisher
島根大学総合理工学部
Publisher Aalternative
Interdisciplinary Faculty of Science and Engineering, Shimane University
NII Type
Departmental Bulletin Paper
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
Remark
30-41+ / 1997-2007
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