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language
eng
Author
Yoshida, Yuki
Tanaka, Senku
Description
The photovoltaic properties of a Ga-doped ZnO (GZO)/3,4,9,10-perylene-tetracarboxyl-bis-benzimidazole (PTCBI)/Zn-phthalocyanine (ZnPc)/Cu heterojunction cell(cell A) and a GZO/ZnPc/Cu Schottky-barriercell(cell B) were investigated. The energy conversion efficiency η of cell A was only 0.02% immediately after the device preparation but improved to 0.46% after aging for 24 days in air. To elucidate the mechanism of this aging effect, photocurrent action and electro-absorption spectra were measured for cell B. The results reveal that a Schottky barrier exists at the ZnPc/Cu interface which blocks the transport of photogenerated holes to the Cuelectrode, and the barrier height is reduced by a white-light illumination of the device after aging. The change in barrier height is attributed to the formation of electron traps at the surface of the ZnPc layer on aging that trap photogenerated electrons.
Journal Title
Journal of Applied Physics
Volume
106
Issue
6
Start Page
064510-1
End Page
064510-8
ISSN
00218979
Published Date
2009
DOI
Publisher
American Institute of Physics
NII Type
Journal Article
Format
PDF
Rights
© 2009 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
The following article appeared in Jour. Appl. Phys. 106, 064510 (2009). and may be found at http://dx.doi.org/10.1063/1.3226880.
Text Version
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Interdisciplinary Graduate School of Science and Engineering
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