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Title Transcription
Ti_<1-x>Hf_xSe_2ケイ ノ ハンドウテキ セイカク ト ソウテンイ
Title Alternative (English)
Semiconductinglike Character of Transport Properties and Phase Transition in Ti<1-x>Hf_xSe_2
File
language
jpn
Author
Taguchi, Isao
Description
The electrlcal resistivity ρ and Hall coefficient R_H have been investigated on pressed powder samples of Ti_<1-x>Hf_xSe_2 and sublimation grown crystals of TiSe_2 from 22 K to 300 K. With decreasing temperature the resistivity exhibits a peak below tbe onset temperature of the superlattice in the case of small x. Then at lower temperatures a semiconductinglike resistivity is observed, suggesting that the initial band gap is positive in the mixed system Ti_<1-x>Hf_xSe_2. While the resistivity ρ at 22 K is also found to be larger than ρ at 300 K for both pressed samples and sublimation grown crystals of TiSe_2, this increase appears to be due to internal strain possibly present in the samples. The results indicate that the mechanism for driving the phase transition is mainly relevant to an excitonic electronhole instability.
Subject
相転移
層状化合物
phase transition
layer compounds
Journal Title
Bulletin of Shimane Medical University
Volume
1
Start Page
57
End Page
66
ISSN
03879097
Published Date
1978-12-01
NCID
AN00107602
Publisher
島根医科大学
NII Type
Departmental Bulletin Paper
Format
PDF
Text Version
出版社版
OAI-PMH Set
Faculty of Medicine
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