| ID | 37050 |
| File | |
| language |
jpn
|
| Title Transcription | ジセダイ パワー ハンドウタイ デバイス GaN HEMT ノ オウヨウ ニ ムケタ キソ ケンキュウ
|
| Title Alternative (English) | A Fundamental Study on the Next Generation Power Semiconductor Device "GaN HEMT" for Applications
|
| Author |
梅上 大勝
|
| Published Date | 2016-03-25
|
| NII Type |
Thesis or Dissertation
|
| Text Version |
博士論文全文
|
| OAI-PMH Set |
Interdisciplinary Graduate School of Science and Engineering
|
| Diploma Number | 甲第574号
|
| Granted Date | 2016-03-25
|
| Degree Name | 博士（工学）
|
| Grantor | 島根大学
|
| Graduate Course |
Interdisciplinary Faculty of Science and Engineering
|
| Granted Year | 2015
|
| Remark | 総博甲第109号
|
