| Title |
Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
|
| Creator |
Rostislav Velichko
Furuta Mamoru
|
| Source Title |
Materials
|
| Volume | 15 |
| Issue | 1 |
| Journal Identifire |
EISSN 1996-1944
|
| Language |
eng
|
| Resource Type | journal article |
| Publisher |
MDPI
|
| Date of Issued | 2022-1-3 |
| 権利関係（リンク） |  This work is licensed under a Creative Commons Attribution 4.0 International License. |
| Access Rights | metadata only access |
| Relation |
[DOI] 10.3390/ma15010334
|
