| Title |
Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model
|
| Creator | |
| Source Title |
Materials Science and Engineering: B
|
| Volume | 263 |
| Language |
eng
|
| Resource Type | journal article |
| Publisher |
Elsevier B.V.
|
| Date of Issued | 2020-10-01 |
| Access Rights | metadata only access |
| Relation |
[DOI] 10.1016/j.mseb.2020.114809
|
