| File | |
| Title |
水素イオンを注入したゲルマニウムのDLTS測定
|
| Title |
DLTS Measurements on Hydrogen Implanted Germanium
|
| Title Transcription |
スイソ イオン オ チュウニュウシタ ゲルマニウム ノ DLTS ソクテイ
|
| Creator |
Ito Kazuyoshi
Ito Takashi
Corbett James W.
|
| Source Title |
島根大学理学部紀要
Memoirs of the Faculty of Science, Shimane University
|
| Volume | 17 |
| Start Page | 23 |
| End Page | 30 |
| Journal Identifire |
ISSN 03879925
|
| Descriptions |
Deep levels introduced by 50 KeV hydrogen ions or 1.5 MeV electrons in undoped germanium have been studied using deep level transient spectroscopy. Five hole traps have been observed after implantation. The energy levels associated with these traps, their cross sections and their annealing behaviours have been determined. The two trap levels at E_v + 0.38 eV and at E_v +0.42 eV annealed at the same temperature, and they are attributable to the defect levels associated with divacancy-hydrogen complex.
|
| Language |
eng
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根大学理学部
The Faculty of Science, Shimane University
|
| Date of Issued | 1983-12-25 |
| Access Rights | open access |
| Relation |
[NCID] AN00108106
|
