| File | |
| Title |
Correlation between the Sign of Hall Coefficient and Lattice Instabiliy in Substituted TiSe_2
|
| Creator |
Taguchi Isao
|
| Source Title |
島根医科大学紀要
Bulletin of Shimane Medical University
|
| Volume | 2 |
| Start Page | 43 |
| End Page | 50 |
| Journal Identifire |
ISSN 03879097
|
| Descriptions |
Abstract
The temperature dependence of the electrical resistivity and the Hall coefficient at 290 K for single crystals of Ti_<1-x>f_xSe_2 are presented. The resistive anomaly due to lattice instability appears in the range of 0 ≤ x ≤ 0.35 where the Hall coefficient is found to be positive. The sign of the Hall coefficient is changed to minus for x ≥ 0.4. The results show that holes as carriers play a fundamental role in the lattice instability in TiSe_2.
|
| Subjects |
layer compound
Hall effect
phase transition
|
| Language |
eng
|
| Resource Type | departmental bulletin paper |
| Publisher |
島根医科大学
|
| Date of Issued | 1979-12-01 |
| Publish Type | Version of Record |
| Access Rights | open access |
| Relation |
[NCID]
AN00107602
|
