Correlation between the Sign of Hall Coefficient and Lattice Instabiliy in Substituted TiSe_2

島根医科大学紀要 Volume 2 Page 43-50 published_at 1979-12-01
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Title
Correlation between the Sign of Hall Coefficient and Lattice Instabiliy in Substituted TiSe_2
Creator
Taguchi Isao
Source Title
島根医科大学紀要
Bulletin of Shimane Medical University
Volume 2
Start Page 43
End Page 50
Journal Identifire
ISSN 03879097
Descriptions
The temperature dependence of the electrical resistivity and the Hall coefficient at 290 K for single crystals of Ti_<1-x>f_xSe_2 are presented. The resistive anomaly due to lattice instability appears in the range of 0 ≤ x ≤ 0.35 where the Hall coefficient is found to be positive. The sign of the Hall coefficient is changed to minus for x ≥ 0.4. The results show that holes as carriers play a fundamental role in the lattice instability in TiSe_2.
Subjects
layer compound ( Other)
Hall effect ( Other)
phase transition ( Other)
Language
eng
Resource Type departmental bulletin paper
Publisher
島根医科大学
Date of Issued 1979-12-01
Publish Type Version of Record
Access Rights open access
Relation
[NCID] AN00107602