| File | |
| Title |
Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices
|
| Creator | |
| Source Title |
電子情報通信学会技術研究報告. ED, 電子デバイス
|
| Start Page | 21 |
| End Page | 24 |
| Journal Identifire |
ISSN 09135685
|
| Descriptions |
■発表会名:2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices■主催者名:電子情報通信学会■開催場所:仙台■発表年月:2006年7月3日～2006年7月5日========================================
|
| Subjects |
MOSFETs
SiGe
heterostructure
hetero-interface trap
charge pumping technique
hot carrier
|
| Language |
eng
|
| Resource Type | conference paper |
| Publisher |
電子情報通信学会
|
| Date of Issued | 2006 |
| Rights |
copyrightc2006 IEICE
|
| Publish Type | Accepted Manuscript |
| Access Rights | restricted access |
| Relation |
[NCID] AN10012954
|
