島根大学総合理工学部紀要.シリーズA

島根大学総合理工学部紀要.シリーズA 32
1998-12-24 発行

シリコンテクノロジーの新しい可能性 : 多孔質シリコンの特性とその応用

New Prospects of the Silicon Technology : Properties of Porous Silicon and their Application to New Electron Devices
原田 曠嗣
ファイル
内容記述(抄録等)
Porous silicon has versatile applications for electron devices,because of its properties of quantum confinement of carriers and/or the porous nature of the structure. This paper reviews the formation mechanism of porous silicon, the mechanism of photoluminescence still under debate and possible new electron devices. Illustrative devices of both the light emittmg diode and the micro field emitter which are carried out by author are also shown.
NCID
AA11157087