島根大学総合理工学部紀要.シリーズA

島根大学総合理工学部紀要.シリーズA 31
1997-12-26 発行

GaAs-on-Si電子デバイスの現状と展望

The Present Status and Prospects in GaAs-on-Si Electromc Devices
森谷 明弘
ファイル
内容記述(抄録等)
Power metal semiconductor field effect transistors (MESFET'S) have been fabricated to show that they have come to the stage of practical use. This paper reviews what have inhibited the practical use of GaAs-on-Si electronic devices and how they have been overcome by focusing the application of GaAs-on-Si to the power MESFET's and high electron mobility transistors (HEMT's). It is demonstrated that the practical application of the GaAs-on-Si power MESFET's to the base-station devices for mobile phones is one of the most attractive in the very near future.
NCID
AA11157087