Ga-Doped ZnO Film as a Transparent Electrode for Phthalocyanine/Perylene Heterojunction Solar Cell

Japanese Journal of Applied Physics Volume 47 Issue 2R Page 867-871 published_at 2008-02-25
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Title
Ga-Doped ZnO Film as a Transparent Electrode for Phthalocyanine/Perylene Heterojunction Solar Cell
Creator
Yoshida Yuki
Tanaka Senku
Yoshino Katsumi
Source Title
Japanese Journal of Applied Physics
Volume 47
Issue 2R
Start Page 867
End Page 871
Journal Identifire
ISSN 00214922
Descriptions
The photovoltaic properties of Zn?phthalocyanine (ZnPc)/3,4,9,10-perylene-tetracarboxyl-bis-benzimidazole (PTCBI) heterojunction solar cells using Ga-doped ZnO (GZO) film as a transparent electrode are studied. When GZO is the electrode in contact with the donor layer, i.e., ZnPc, the energy conversion efficiency η is only 1/4 of that for the cell using indium?tin-oxide (ITO) as the electrode. When GZO is the electrode in contact with the acceptor layer, i.e., PTCBI, on the other hand, the cell has a three times larger η than the cell using ITO. These results are explained by the work function of GZO being lower than that of ITO. When GZO, or ITO, is used as an electrode for PTCBI, an interesting aging effect is observed. For example, by keeping the GZO-based cell in open air for 6 days in the dark, the energy conversion efficiency and the short-circuit current are increased by factors of 1.67 and 1.36, respectively.
Subjects
solar cells ( Other)
organic semiconductors ( Other)
heterojunction ( Other)
zinc oxide ( Other)
transparent electrode ( Other)
Language
eng
Resource Type journal article
Publisher
公益社団法人応用物理学会
Japanese Journal of Applied Physics
Date of Issued 2008-02-25
Rights
公益社団法人応用物理学会
Publish Type Accepted Manuscript
Access Rights open access
Relation
[DOI] 10.1143/JJAP.47.867
[NCID] AA12295836