タイトルヨミ | Ti_<1-x>Hf_xSe_2ケイ ノ ハンドウテキ セイカク ト ソウテンイ
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日本語以外のタイトル | Semiconductinglike Character of Transport Properties and Phase Transition in Ti<1-x>Hf_xSe_2
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ファイル | |
言語 |
日本語
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著者 |
田口 功
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内容記述(抄録等) | The electrlcal resistivity ρ and Hall coefficient R_H have been investigated on pressed powder samples of Ti_<1-x>Hf_xSe_2 and sublimation grown crystals of TiSe_2 from 22 K to 300 K. With decreasing temperature the resistivity exhibits a peak below tbe onset temperature of the superlattice in the case of small x. Then at lower temperatures a semiconductinglike resistivity is observed, suggesting that the initial band gap is positive in the mixed system Ti_<1-x>Hf_xSe_2. While the resistivity ρ at 22 K is also found to be larger than ρ at 300 K for both pressed samples and sublimation grown crystals of TiSe_2, this increase appears to be due to internal strain possibly present in the samples. The results indicate that the mechanism for driving the phase transition is mainly relevant to an excitonic electronhole instability.
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主題 | 相転移
層状化合物
phase transition
layer compounds
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掲載誌名 |
島根医科大学紀要
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巻 | 1
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開始ページ | 57
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終了ページ | 66
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ISSN | 03879097
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発行日 | 1978-12-01
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NCID | AN00107602
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出版者 | 島根医科大学
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資料タイプ |
紀要論文
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ファイル形式 |
PDF
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著者版/出版社版 |
出版社版
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部局 |
医学部
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他の一覧 |