タイトルヨミ | テイ テンイ ミツド アルミニウム タン ケッショウ ニ オケル ゲンシ クウコウ ノ セイセイ
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日本語以外のタイトル | Vacancy Generation in Aluminum Single Crystal with a Low Dislocation Density
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ファイル | |
言語 |
英語
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著者 |
小野 興太郎
伊藤 一義
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内容記述(抄録等) | Vacancy generation process m nearly perfect aluminum single crystal was investigated by means of a shape of helical dislocation by X-ray diffraction topography, using a translation type high temperature Lang camera. Helical dislocations as a vacancy source were observed after temperature rise . The shape of helix at initial stage of the appearance looked like a coil spring. But the shape changed to the helix refiected the crystal structure of specimen with the lapse of time. Under-saturation of vacancy in the specimen was estimated from the size of helix. In the results , most of vacancies were emitted from dislocations existed in as-grown nearly perfect crystals, and it takes several hours to achieve the equilibrium concentration of vacancy after a temperature rise.
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掲載誌名 |
島根大学理学部紀要
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巻 | 24
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開始ページ | 41
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終了ページ | 46
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ISSN | 03879925
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発行日 | 1990-12-25
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NCID | AN00108106
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出版者 | 島根大学理学部
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出版者別表記 | The Faculty of Science, Shimane University
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資料タイプ |
紀要論文
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部局 |
総合理工学部
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他の一覧 |