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Title Transcription
GAAS キバンジョウ ノ チョウハチョウタイ ヒカリ ツウシンヨウ レーザ ノ カイハツ ニ ムケタ GAAS キバンジョウ ノ T1GAAS ノ MBE セイチョウ ノ ココロミ
Title Alternative (English)
MBE growth of T1GaAs on GaAs substrates for fabricating long-wavelength laser diodes on GaAs substrates
File
language
jpn
Author
Asahina, Shuichi
Description
We report the growth of TlGaAs on(001)GaAs substrates by molecular beam epitaxy. X-ray diffraction measurements showed resolved peaks of Tl_x,Gal_<1-x>As epitaxial layers and GaAs substrates for the samples grown at substrate tempratures of 400-450℃. The peak separation of 30 are sec observed in the X-ray rocking curves indicates the existence of Tl_xGa_<1-x>As epitaxial layers having Tl contents around x=0.0016.
Journal Title
島根大学総合理工学部紀要. シリーズA
Volume
33
Start Page
101
End Page
108
ISSN
13427113
Published Date
1999-12-24
NCID
AA11157087
Publisher
島根大学総合理工学部
Publisher Aalternative
Interdisciplinary Faculty of Science and Engineering, Shimane University
NII Type
Departmental Bulletin Paper
Format
PDF
Text Version
出版社版
Gyoseki ID
e19783
OAI-PMH Set
Interdisciplinary Graduate School of Science and Engineering
Remark
30-41+ / 1997-2007
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