ダウンロード数 : ?
ファイル
言語
英語
著者
MORIKAWA, Kimihiko Department of Materials Science, Shimane University
OKAMOTO, Hiroyuki Department of Health Sciences, Kanazawa University
HASHIMOTO, Eiji Hiroshima Synchrotron Radiation Center, Hiroshima University
内容記述(抄録等)
The vacancy generation process in ultrahigh-purity aluminum single crystals with a low dislocation density was investigated by synchrotron radiation topography using a white X-ray beam. Some straight lines were observed in the topographs taken after temperature rose to 300℃ from room temperature, and they were confirmed to be rows of successive small interstitial-type dislocation loops grown as vacancy sources. It was concluded that the thermal generation mechanism of vacancies in ultrahigh-purity aluminum single crystals with a low dislocation density consists of the following two steps. First, small interstitial loops are heterogeneously formed in the crystal lattice; second, these convert to lengthened loops with the development of screw components and finally grow into rows of dislocation loops emitting vacancies into the lattice. However, contribution of new vacancy generation mechanism, growth of row of interstitial type dislocation loop for thermal equilibrium vacancy concentration is less than several percent. Therefore, major vacancy source is small vacancy cluster or vacancy type dislocation loops grown after slow cooling during crystal growth.
主題
row of dislocation loops
vacancy source
topography
aluminum
掲載誌名
Transactions of the Materials Research Society of Japan
39
2
開始ページ
169
終了ページ
172
ISSN
1382-3469
ISSN(Online)
2188-1650
発行日
2014/06/01
出版者
一般社団法人 日本MRS
出版者ヨミ
イッパン シャダン ホウジン ニホン MRS
資料タイプ
学術雑誌論文
ファイル形式
PDF
著者版/出版社版
出版社版
業績ID
e26304
部局
総合理工学部