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タイトルヨミ
カガク ユソウホウ ニヨル II オヨビ I III VI2 ゾク カゴウブツ ハンドウタイ ノ ケッショウ セイチョウ 2 ネツリキガクテキ コウサツ
日本語以外のタイトル
Crystal Growth of II-VI and 1-III-VI_2 Compound Semiconductors by Chemical Transport(2) : Thermodynamical Consideration
ファイル
言語
英語
著者
野田 泰稔
古川 吉孝
中澤 重厚
内容記述(抄録等)
Thermodynamical calculations were performed for the chemical transport systems of ZnSe+I_2 and AgGaS_2+X_2 (X = Cl, Br and I). The vapor pressures of gas molecules were calculated at the source and growth zones by using the thermodynamic data. The transport rates for ZnSe and AgGaS_2 were estimated on the basis of the transport equation, which is limited by the diffusion and laminar flow of gaseous molecules and modified by thermal convection at high pressures. The diffusibities of the molecules were estimated by using Lennard-Jones parameters. The calculated transport rates almost reproduced the characteristic features observed for both ZnSe and AgGaS_2.In case of ZnSe transport, the abrupt change in the transport rate was attributable to the thermal convection. The transport rate calculated for AgGaS_2 reproduced the observed gradual change with an increase of halogen, but did not realize the observed order (CI < Br< I) in the magnitude of the transport rate.
The chalcogen (Se or S) vapor pressures calculated at the growth zone increased with an increase of transport agent and exceeded that of dissociation of the stoichiometric ZnSe or AgGaS_2.The fact may have caused the introduction of the non-radiative recombination centers in the grown crystals.
掲載誌名
島根大学総合理工学部紀要. シリーズA
32
開始ページ
19
終了ページ
36
ISSN
13427113
発行日
1998-12-24
NCID
AA11157087
出版者
島根大学総合理工学部
出版者別表記
Interdisciplinary Faculty of Science and Engineering, Shimane University
資料タイプ
紀要論文
部局
(旧組織)大学院総合理工学研究科
備考
30-41+ / 1997-2007
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