著者 |
岡本 博之
金沢大学医薬保健研究域
|
内容記述(抄録等) | X-ray topographic studies on characterization of semiconductor thin layer were reviewed. Reflection topographs of thin layer were taken by synchrotron radiation X-ray from a storage ring. In these papers, relaxation mechanisms of mismatch in lattice constant between thin layer and substrate were clarified and critical thickness for formation of misfit dislocations was determined for various hetero-epitaxial grown semiconductor thin film. Investigations using grazing incident X-ray topography on semiconductor thin film were also surveyed.
|
掲載誌情報 |
日本結晶学会誌
54
( 1
), 24
- 28
, 2012/2/29
|
出版者 | 日本結晶学会
|