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  4. Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

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Use this link to cite this item : https://ir.lib.shimane-u.ac.jp/54143
ID 54143
language
eng
Author
Koretomo Daichi Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Hamada , Shuhei Material Science and Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Magari, Yusaku
Furuta , Mamoru Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan / Material Science and Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan / Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Journal Title
Materials
Volume
13
Issue
8
ISSN（Online）
1996-1944
Published Date
2020-04-20
DOI
10.3390/ma13081935
Publisher
MDPI
NII Type
Journal Article
OAI-PMH Set
Faculty of Science and Engineering