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  4. Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model

Restudy of low-temperature data of Hall-effect measurements on compensated n-InSb and n-InAs on the basis of an impurity-Hubbard-band model

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Use this link to cite this item : https://ir.lib.shimane-u.ac.jp/54140
ID 54140
language
eng
Author
Kajikawa, Yasutomo
Journal Title
Materials Science and Engineering: B
Volume
263
Published Date
2020-10-01
DOI
10.1016/j.mseb.2020.114809
Publisher
Elsevier B.V.
NII Type
Journal Article
Gyoseki ID
e39069
OAI-PMH Set
Faculty of Science and Engineering