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ID 53953
language
eng
Author
Tsuchiya Toshiaki Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
Yoshida Keiichi Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
Sakuraba Masao Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Murota Junichi Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Subject
heterointerface trap; carrier capture process; charge pumping; MOSFET
Journal Title
TECHNOLOGY EVOLUTION FOR SILICON NANO-ELECTRONICS
Volume
470
Start Page
201
End Page
+
ISSN
1013-9826
Published Date
2011
DOI
Publisher
TRANS TECH PUBLICATIONS LTD
NII Type
Journal Article
OAI-PMH Set
Faculty of Science and Engineering