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  4. Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

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ID 54840
language
eng
Attribute
Article
Author
Rostislav Velichko Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Magari, Yusaku
Furuta , Mamoru Engineering Course, Kochi University of Technology, Kami, Kochi 782-8502, Japan　/　 School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan　/　 Center for Nanotechnology, Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan
Journal Title
Materials
Volume
15
Issue
1
ISSN（Online）
1996-1944
Published Date
2022-1-3
DOI
10.3390/ma15010334
Publisher
MDPI
NII Type
Journal Article
rights(link)
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
OAI-PMH Set
Faculty of Science and Engineering