島根大学理学部紀要

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島根大学理学部紀要 19
1985-12-25 発行

電子線照射した高純度ゲルマニウム中の深い欠陥準位

Deep Defect States in High-Purity Germanium Irradiated with Electrons
伊藤 一義
馬場 一郎
伊藤 隆
ファイル
内容記述(抄録等)
Deep defect levels produced in high-purity n-type and p-type germanium by irradiation with 1.O MeV, 1. 5 MeV and 2.0 MeV electrons were studied by DLTS technique. Two electron traps located at E_c -0.36 eV and E_c -0.41 eV found to be formed in n-type material and two hole traps at E_v +0.22 eV and E_v +0.31 eV in p-type. Introduction rates of the traps at E_c -0.41 eV and E_v +0.22 eV depended on irradiation energies of electrons. Capture cross sections of the two electron traps were estimated to be 1.8 x 10^<-11>cm_2 for the level at E_c - 0.36 eV and 8.4 x l0^<-13> cm_2 for the E_c -0.41 eV level, and those of the two hole traps were 1.8 x 10^<-13> cm_2 for the E_v+0.22 eV Ievel and 5.5 x 10^<-14> cm_2 for the E_v+0.31 eV level.